Synthesis and applications of 2D Transition Metal Disulfides (TMDSs) nanosheet (Hyung-Jun Kim, Yonsei Univ.)

Hyung-Jun Kim
2014-04-04 pm 04:00 / EB1, E207
Synthesis and applications of 2D Transition Metal Disulfides
(TMDSs) nanosheet

 
Hyungjun Kim
 
School of Electrical and Electronic Engineering, Yonsei University, Seoul
 
Graphene opened up a new era of two-dimensional (2D) material with extremely high carrier mobility and flexibility. Beyond the graphene, 2D transition metal disulfides (TMDSs) nanosheets have attracted great attention to complementing graphene such as zero band gap in recent few years. 2D TMDSs nanosheets have shown exotic electronic and optical properties: Indirect-to-direct bandgap transition with reducing number of layers, high carrier mobility and strong spin-orbit coupling due to their broken inversion symmetry. Despite of their remarkable properties, however, the studies on the synthesis of 2D TMDSs nanosheets are still showing various limitations in layer controllability, large area uniformity. Thus, the focus of our research is to understand and control the growth of 2D TMDSs nanosheets based on atomic layer deposition (ALD) and chemical vapor deposition (CVD) and to apply to electronic and optical devices. In this talk, I will broadly explain the synthesis of MoS2, WS2 and Mo(1-x)WxS2 alloy nanosheets using ALD and CVD process which can synthesize the 2D TMDSs nanosheets with thickness controllability and large area uniformity, and electronic and optical properties of synthesized 2D TMDSs nanosheets. Furthermore, potential applications of synthesized 2D TMDSs nanosheets will be introduced.