구성원
구성원
교원소개
Tae-Sik Yoon윤태식
- 위치제1공학관(102동) 401-3호
- 메일tsyoon@unist.ac.kr
연구주제
반도체 소재 및 소자
- 연구분야반도체 재료·공정·소자 연구, 비휘발성 메모리 및 차세대 메모리 소자 개발, 뉴로모픽(인공 시냅스) 소자 연구
- 연구실반도체 나노소자 연구실
반도체 나노소자 연구실（Nano Semiconductor Research Laboratory）
- 반도체 나노소자 연구실은 반도체 재료, 공정, 소자 연구를 수행하는 연구실로서, 차세대 반도체 시스템인 뉴로모픽 시스템에서 요구하는 인공시냅스 소자, 멤컴퓨팅 소자, 그리고 차세대 비휘발성 메모리 소자 연구를 수행하고 있습니다.
Curriculum Vitae
- 2021-Present: Professor, UNIST
- 2007-2020: Professor, Myongji University
- 2007: Senior Researcher, Samsung Electronics
- 2004-2006: Postdoctoral Researcher, UCLA
Academic Credential
- 2002: Ph.D., Materials Science and Engineering, Seoul National University
- 1998: M.S., Metallurgical Engineering, Seoul National University
- 1996: B.S., Metallurgical Engineering, Seoul National University
Research Keywords and Topics
- Semiconductor materials and devices, memory, neuromorphic devices
Publications (selected)
- “Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide”
- Jimin Han, Botoung Jeong, Yuri Kim, Joonki Suh, Hongsik Jeong, Hyun-Mi Kim, Tae-Sik Yoon, Mater. Today Adv. 2022, 15, 100264
- “Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application”
- Keonwon Beom, Jimin Han, Hyun-Mi Kim, Tae-Sik Yoon, Nanoscale. 2021, 13, 11370
- “Nonvolatile memory and artificial synaptic characteristics in thin-film transistors with atomic layer deposited HfOx gate insulator and ZnO channel layer”
- Hyerin Lee, Keonwon Beom, Minju Kim, Chi Jung Kang, Tae-Sik Yoon, Adv. Electron. Mater. 2020, 6, 2000412
Awards/Honors/Memberships
- Minister Commendation from Ministry of Science and ICT for the contribution to semiconductor technology development (2020)
- Best Poster Award from Materials Research Society (MRS) Fall Meeting, Boston, Nov. 2017