세미나

Recently, two-dimensional (2D) van der Waals (vdW) multilayer materials consisting of multiple conducting layers have explored intensively as a promising candidate for optoelectronic applications. But, to further provide a clear development road map, an accurate static and low-frequency (LF) noise characterization should be performed in terms of carrier conductivity, mobility, density, contact resistance, threshold voltage, and dielectric surface trap density to feedback for a device optimization. In this presentation, I will revisit numerous static and LF noise characterization methodologies, and applied them to 2D monolayer MoS2 to manifest various merits of the use of h-BN dielectrics for a 2D carrier transport. Next, the carrier dynamics of sulfur mono-vacancy in monolayer MoS2 will be discussed by combining (LF) noise measurements with conductive atomic force microscopy (C-AFM), extending LF noise spectroscopy into the nanoscale regime. This presentation would be helpful to realize high-performing electronic devices in 2D vdW materials by understanding defect dynamics.